| PART |
Description |
Maker |
| 10XS3435V10 |
Quad High Side Switch(Dual 10 mOhm, Dual 35 mOhm)
|
Freescale Semiconductor, Inc
|
| MTP55N06 MTP55N06Z MTP55N06Z_D ON2627 ON2626 |
From old datasheet system
TMOS POWER FET 55 AMPERES 60 VOLTS RDS(on) = 18 mohm
|
Motorola, Inc.
MOTOROLA[Motorola, Inc]
ON Semi
|
| 06XS4200 |
Dual 24 V 6.0 mOhm High Side Switch
|
Freescale Semiconductor, Inc
|
| SPP47N10L |
100-V MOS transistors in S-FET technology( 采用S-FET 技术制作的 100-V MOS 型晶体管) 47 A, 100 V, 0.04 ohm, N-CHANNEL, Si, POWER, MOSFET
|
SIEMENS AG
|
| MTB4N80E1_D ON2427 MTB4N80E1 MTB4N80E1-D |
TMOS E-FET High Energy Power FET D2PAK-SL Straight Lead N-Channel Enhancement-Mode Silicon Gate
TMOS POWER FET 4.0 AMPERES 800 VOLTS
From old datasheet system
|
ON Semiconductor
MOTOROLA[Motorola, Inc]
|
| 35XS3500V12 |
Smart Rear Corner Light Switch(penta 35 mOhm)
|
Freescale Semiconductor, Inc
|
| SPB100N06S2-05 SPP100N06S2-05 |
Low Voltage MOSFETs - TO220/263; 100 A; 55V; NL; 5 mOhm
OptiMOS Power-Transistor
|
INFINEON[Infineon Technologies AG]
|
| STH185N10F3-2 |
Automotive-grade N-channel 100 V, 3.9 mOhm typ., 180 A STripFET(TM) III Power MOSFET H2PAK-2 package
|
ST Microelectronics
|
| MC33988CHFK |
Dual Intelligent High-current Self-protected Silicon High Side Switch (8.0 mOhm)
|
Freescale Semiconductor, Inc
|
| MC33984 |
Dual Intelligent High-Current Self-Protected Silicon High-Side Switch (4.0 mOhm)(双智能大电流带自保护功能的硅高端开关（4mOhm
|
飞思卡尔半导体(中国)有限公司
|
| MTD1N80E MTD1N80E-D |
TMOS E-FET Power Field Effect Transistor DPAK for Surface Mount N-Channel Enhancement-Mode Silicon Gate
TMOS POWER FET 1.0 AMPERES 800 VOLTS RDS(on) = 12 OHM
|
ON Semiconductor
Motorola, Inc
|
| IS9-1715ARH/PROTO 5962F0052101VXC 5962F0052101QXC |
Complementary Switch FET Driver, Rad-Hard
Radiation Hardened Complementary Switch FET Driver 3 A BUF OR INV BASED MOSFET DRIVER, CDFP16
|
Intersil Corporation
Intersil, Corp.
|
